MOSFETs have a higher fc (can be in the GHz range) than JFETs or bipolar transistors which is usually below 2 kHz for the latter.
He studied electrical engineering at MIT, where he wrote a PhD thesis on "velocity overshoot in deeply scaled MOSFETs", under supervision of Professor Dimitri Antoniadis.
The process has three levels of aluminium interconnect and an effective channel length (the distance between the source and drain contacts of the MOSFET transistors) of 0.8 µm.
p-channel MOSFET (metal-oxide-semiconductor field-effect transistor)
The performance of plasma actuators is determined by dielectric materials and power inputs, later is limited by the qualities of MOSFET or IGBT.
In a polycide MOSFET transistor process, the silicide is formed only over the polysilicon film as formation occurs prior to any polysilicon etch.
R. G. Arns, "The other transistor: early history of the metal-oxide-semiconductor field-effect transistor," Engineering Science and Education Journal, 7, No. 5 (October, 1998): 233-240
During his time at the University of Waterloo, he invented many silicon image sensors, introduced new technology on MOSFET and Charge-coupled devices (CCDs) devices, and developed some fundamental theories.
CPU implementations that consisted of multiple MOSFET custom chips included the 8100 and 8200 class machines.
MOSFET |
With Frank Wanlass as director of research and engineering, GMe was the first company to design, fabricate, and sell MOS integrated circuits, small-scale integrated chips for NASA satellites.
Most notably was his induction into the National Inventors Hall of Fame in 1997 for his invention of the self-aligned gate ion implanted MOSFET.