Earlier PMOS technologies were not sensitive to this effect because the positively-charged sodium was naturally attracted towards the negatively-charged gate, and away from the channel, minimizing threshold voltage shifts.
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A metal gate, in the context of a lateral Metal-Oxide-Semiconductor MOS stack, is just that—the gate material is made from a metal.
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For decades (i.e., in the late 1970s), the industry had moved away from metal (most typically aluminum, evaporated in a vacuum chamber onto the wafer surface), as the gate material in the MOS stack due to fabrication complications.
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