Hafnium is a substituting impurity and may be present in quantities ranging from 0.1 to several percent.
Hafnium |
ALD can be used to deposit several types of thin films, including various oxides (e.g. ZnO, nitrides (e.g. TiN, TaN, WN, NbN), metals (e.g. Ru, Ir, Pt), and metal sulfides (e.g. ZnS).